Effect of substitutional defects on resonant tunneling diodes based on armchair graphene and boron nitride nanoribbons lateral heterojunctions
نویسندگان
چکیده
منابع مشابه
Atomically controlled substitutional boron-doping of graphene nanoribbons
Boron is a unique element in terms of electron deficiency and Lewis acidity. Incorporation of boron atoms into an aromatic carbon framework offers a wide variety of functionality. However, the intrinsic instability of organoboron compounds against moisture and oxygen has delayed the development. Here, we present boron-doped graphene nanoribbons (B-GNRs) of widths of N=7, 14 and 21 by on-surface...
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F. Amet,1 J. R. Williams,2 A. G. F. Garcia,2 M. Yankowitz,2 K. Watanabe,3 T. Taniguchi,3 and D. Goldhaber-Gordon2 1Department of Applied Physics, Stanford University, Stanford, California 94305, USA 2Department of Physics, Stanford University, Stanford, California 94305, USA 3Advanced Materials Laboratory, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan (Received 1...
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High electron mobility of graphene has enabled their application in high-frequency analogue devices but their gapless nature has hindered their use in digital switches. In contrast, the structural analogous, h-BN sheets and BN nanotubes (BNNTs) are wide band gap insulators. Here we show that the growth of electrically insulating BNNTs on graphene can enable the use of graphene as effective digi...
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ژورنال
عنوان ژورنال: Beilstein Journal of Nanotechnology
سال: 2020
ISSN: 2190-4286
DOI: 10.3762/bjnano.11.56